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4 K photoluminescence characterization of silicon implanted GaAs |
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| Authors: | C. Lamberti A. Antolini S. Bianchi A. Castelli M. Dellagiovanna |
| Affiliation: | 1. Dipartimento di Chimica Inorganica, Chimica Fisica e Chimica dei Materiali, Università di Torino, Via P. Giuria 7, I-10125, Torino, Italy 2. CSELT- Centro Studi e Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, I-10148, Torino, Italy 3. ALCATEL Telettra, Via Trento 30, I-20059, Vimercate, Italy |
| Abstract: | GaAs technology for microwave devices (MESFET and MMIC) has received a significant improvement by ion implantation of silicon to form n-type active channel regions. Owing to amphoteric behaviour of silicon in GaAs, different activation of the implanted species can be obtained, depending on the post-implantation annealing treatment. In this paper we describe the results of the influence of rapid thermal annealing on implanted GaAs and using 4 K photoluminescence spectroscopy we identify the corresponding species (SiAS and SiAS-VAS complex) in silicon doped GaAs and explain the electrical behaviour of the implanted and annealed material. |
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