Intrinsic electrical properties of individual single-walled carbon nanotubes with small band gaps |
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| Authors: | Zhou Kong Dai |
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| Institution: | Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA. |
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| Abstract: | Individual single-walled carbon nanotubes (SWNT) exhibiting small band gaps on the order of 10 meV are observed for the first time in electron transport measurements. Transport through the valence or conduction band of a small-gap semiconducting SWNT (SGS-SWNT) can be tuned by a nearby gate voltage. Intrinsic electrical properties of the Ohmically contacted SGS-SWNT are elucidated. An SGS-SWNT exhibits metal- or semiconductorlike characteristics depending on the Fermi level position in the band structure. |
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