一种温度不敏感的高线性功率放大器

设计了一种温度不灵敏的高线性度的射频功率放大器芯片,采用新颖的带温度反馈环路的有源片上自适应偏置电路,该电路降低了温度引起的放大器集电极直流电流分量的变化量,补偿了由温度变化而引起的性能偏差,进而有效提高了放大器的线性度。基于这个温度不灵敏的偏置结构采用InGaP/GaAs HBT工艺设计了一个工作在2110~2170 MHz频段的功率放大器。测试结果表明,该功放在工作频段内的增益大于等于35.3 dB;在中心频率2140 MHz处,1 dB功率压缩点大于33 dBm,功率附加效率在输出功率24.5 dBm时为18%;使用LTE_FDD调制信号,获得邻信道功率比为-47 dBc。在环境温度为-40℃、+25℃和+80℃条件下,功放的增益平坦度较好,增益变化量小于1.5 dB,输出级集电极电流基本不变,有效降低了功放对温度的敏感性。

A Temperature-insensitive High Linear Power Amplifier

A temperature-insensitive high linearity RF power amplifier was proposed.A novel ac tive on-chip adaptive bias circuit with a temperature feedback loop was used,which reduced the varia tion of DC current component in collector of the amplifier caused by temperature,compensated the temperature-induced performance deviation,and thus contributed to the linearity performance of the amplifier.The presented power amplifier is designed with InGaP/GaAs HBT technology and operates from 2110 to 2170 MHz.The power amplifier shows a measured gain of greater than or equal to 35.3 dB in the operation frequency band.At the center frequency of 2140 MHz,the 1 dB power compres sion point is 33 dBm,and the power added efficiency(PAE)is 18%under an output power of 24.5 dBm.An adjacent channel power ratio(ACPR)of-47 dBc is achieved with the input of the LTE_FDD modulated signal.Besides,at ambient temperature of-40℃,+25℃and+80℃,the gain variations are less than 1.5 dB and the output stage collector current is basically unchanged,which effectively reduces the temperature sensitivity of the power amplifier.