Mobility of nondegenerate two-dimensional electrons in scattering by a correlated distribution of impurity ions

The temperature dependences of the inverse mobility of nondegenerate two-dimensional electrons in scattering by impurity ions in heterostructures with a narrow spacer have been investigated using the Al _x Ga_{1 ? x} As/GaAs heterostructure as an example. Correlations in the arrangement of impurity ions have been taken into account in the model of hard spheres on a plane. The influence of the form of the structure factor in the electron mobility has been considered.