| InN薄膜的氧化特性研究 |
| |
| 引用本文： | 谢自力,张荣,修向前,刘斌,朱顺明,赵红,濮林,韩平,江若琏,施毅,郑有炓. InN薄膜的氧化特性研究[J]. 物理学报, 2007, 56(2): 1032-1035 |
| |
| 作者姓名： | 谢自力 张荣 修向前 刘斌 朱顺明 赵红 濮林 韩平 江若琏 施毅 郑有炓 |
| |
| 作者单位： | 南京大学物理系，江苏省光电功能材料重点实验室，南京 210093 |
| |
| 基金项目： | 国家重点基础研究发展计划(973计划);国家自然科学基金;教育部科学技术研究项目;教育部高等学校博士学科点专项科研基金;江苏省自然科学基金 |
| |
| 摘 要： | 研究了InN薄膜在不同氧气氛中的氧化特性. 研究表明，在400 ℃以下，InN薄膜很难被氧化，而金属In很容易被氧化. 因此富In的InN薄膜的氧化在400 ℃以下主要是金属In的氧化，在400 ℃以上为金属In和InN的同时被氧化. 在400 ℃以上的氧化过程中，InN的表观氧化速率非常慢，这可能和InN的高温分解有关. InN的湿氧和干氧氧化结果说明湿氧氧化速率比干氧快. 关键词：InN氧化铟氧化X射线衍射
|
| 关 键 词： | InN 氧化铟 氧化 X射线衍射 |
| 文章编号： | 1000-3290/2007/56(02)/1032-04 |
| 收稿时间： | 2006-04-06 |
| 修稿时间： | 2006-04-06 |
The oxidation characteristics of InN films |
| |
| Xie ZiLi,Zhang Rong,Xiu Xiang-Qian,Liu Bin,Zhu Shun-Ming,Zhao Hong,Pu Lin,Han Ping,Jiang Ruo-Lian,Shi Yi,Zheng You-Dou. The oxidation characteristics of InN films[J]. Acta Physica Sinica, 2007, 56(2): 1032-1035 |
| |
| Authors: | Xie ZiLi Zhang Rong Xiu Xiang-Qian Liu Bin Zhu Shun-Ming Zhao Hong Pu Lin Han Ping Jiang Ruo-Lian Shi Yi Zheng You-Dou |
| |
| Affiliation: | Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Sience and Technology and Department of Physics, Nanjing University, Nanjing 210093, China |
| |
| Abstract: | The characteristics of oxidation of InN film in different oxygen atmosphere have been investigated. At the temperature under 400 ℃, the oxidation of InN film is difficult, but the oxidation of metal In is very easy. Thus, the oxidation of In is the main process during oxidation of the In-rich InN film under the temperature less than 400 ℃. As the annealing temperature is higher than 400 ℃, metal In and InN are oxidated meanwhile. Although oxidation under the temperature high than 400 ℃, InN is apparently oxidated very slowly. This may be due to the decomposition of InN. The oxidation rate under the ambience of wet oxygen is larger than that under dry oxygen. |
| |
| Keywords: | InN |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
|
点击此处可从《物理学报》下载免费的PDF全文 |
|
