Studies of deep levels in He+-irradiated silicon |
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| Authors: | D.C. Schmidt J.F. Barbot C. Blanchard P. Desgardin E. Ntsoenzok G. Blondiaux |
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| Affiliation: | (1) Laboratoire de Métallurgie Physique URA 131 CNRS, Faculté des Sciences, SP2MI – Bd3, Téléport 2, 86960 Futuroscope Cedex, France (Fax: +33-5/49 49 66 92, E-mail: Jean-Francois.Barbot@lmp.univ-poitiers.fr), FR;(2) CNRS-CERI, 3A rue de la Férollerie, 45071 Orléans Cedex, France, FR |
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| Abstract: | 9 to 1013 particles/cm2 have been investigated by the deep level transient spectroscopy technique and capacitance-voltage profiling. Under low fluence irradiation at least four main electron traps have been observed. With further increase in irradiation fluence, two new levels located at Ec-0.56 eV and Ec-0.64 eV appear on the high-temperature side of the DLTS signal. The slope change observed in the amplitude variations of the singly negative charge state of the divacancy versus the dose takes place when these two new levels appear. This suggests that both are multivacancy-related defects. After annealing at 350 °C for 15 min, all electron traps have disappeared. Moreover, no shallow levels are created during the annealing. Received: 12 December 1996/Accepted: 6 May 1997 |
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| Keywords: | PACS: 72.20J |
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