| 在ZnO/Si衬底上ZnCdSe/ZnSe多量子阱的生长与光学特性 |
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| 引用本文： | 王晓华,范希武,单崇新,张振中,刘益春.在ZnO/Si衬底上ZnCdSe/ZnSe多量子阱的生长与光学特性[J].中国激光,2004,31(3):97-300. |
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| 作者姓名： | 王晓华 范希武 单崇新 张振中 刘益春 |
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| 作者单位： | 1. 中国科学院长春光学精密机械与物理研究所,中国科学院激发态物理重点实验室,吉林,长春,130033;长春理工大学高功率半导体激光国家重点实验室,吉林,长春,130022
2. 中国科学院长春光学精密机械与物理研究所,中国科学院激发态物理重点实验室,吉林,长春,130033 |
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| 基金项目： | 国家攀登计划，国家自然科学重大基金 (No .6 9896 2 6 0 )，国家自然科学基金，中国科学院百人计划，中国科学院知识创新工程资助项目 |
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| 摘 要： | 在经NH3等离子体氮化的Si(100)衬底上。用等离子体增强化学气相淀积(PECVD)的方法生长了ZnO缓冲层，经X射线衍射(XRD)测量，得到了单一取向的ZnO(0002)膜。在此ZnO缓冲层上利用低压金属有机化学气相淀积(LP-MOCVD)方法生长了较高质量的ZnCdSe／ZnSe量子阱。通过不同阱宽的ZnCdSe／ZnSe量子阱生长和测量，得到了多级共振拉曼峰。从发光谱中可见，在1520nm附近有很强的发光，而在未覆盖ZnO的Si衬底上直接生长的ZnCdSe／ZnSe量子阱结构，其光致发光(PL)谱未见发光。可见，在氮化的Si衬底上覆盖ZnO膜生长的ZnCdSe/ZnSe量子阱质量较好。是一种在Si衬底上生长Ⅱ-Ⅵ族化合物半导体材料的有效方法。
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| 关 键 词： | 薄膜物理学 ZnO／Si衬底 ZnCdSe／ZnSe量子阱 低压金属有机化学气相淀积 生长 光学特性 |
| 收稿时间： | 2002/10/23 |
Growth and Optical Characteristic of ZnCdSe/ZnSe Multi-quantum Wells on ZnO/Si Substrates |
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| WANG Xiao-hua ,FAN Xi-wu ,SHAN Chong-xin ,ZHANG Zhen-zhong ,LIU Yi-chun Laboratory of Excited State Processes,The Chinese Academy of Sciences,Changchun Institute of Optics,Fine Mechanics and Physics,The Chinese Academy of Sciences,Changchun,Jilin ,China National Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun,Jilin ,China.Growth and Optical Characteristic of ZnCdSe/ZnSe Multi-quantum Wells on ZnO/Si Substrates[J].Chinese Journal of Lasers,2004,31(3):97-300. |
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| Authors: | WANG Xiao-hua FAN Xi-wu SHAN Chong-xin ZHANG Zhen-zhong LIU Yi-chun Laboratory of Excited State Processes The Chinese Academy of Sciences Changchun Institute of Optics Fine Mechanics and Physics The Chinese Academy of Sciences Changchun Jilin China National Key Laboratory of High Power Semiconductor Laser Changchun University of Science and Technology Changchun Jilin China |
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| Institution: | WANG Xiao-hua 1,2,FAN Xi-wu 1,SHAN Chong-xin 1,ZHANG Zhen-zhong 1,LIU Yi-chun 1 1Laboratory of Excited State Processes,The Chinese Academy of Sciences,Changchun Institute of Optics,Fine Mechanics and Physics,The Chinese Academy of Sciences,Changchun,Jilin 130033,China 2National Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun,Jilin 130022,China |
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| Abstract: | The growth of ZnCdSe/ZnSe quantum well on N-treated Si substrates which were covered with ZnO by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) was made. Prior to the growth, the Si substrates were treated with NH 3-passivate method, and then ZnO layer was deposited by plasma-enhanced chemical vapor deposition (PECVD) on the passivated Si substrates, X-ray measurement indicated that single orientation ZnO (0002) film was obtained. On these ZnO-Si substrates, ZnCdSe/ZnSe quantum wells were consequently grown by LP-MOCVD. There were multi-peaks in the Raman resonant spectra (RRS) of ZnCdSe/ZnSe quantum wells with different well width. PL investigations showed that the emission peak of the QW structures located at about 520 nm, at RT. However, the luminescent signals of the ZnCdSe/ZnSe quantum wells grown directly on Si substrates were undetectable. This indicated that using NH 3-passivate Si substrates covered with ZnO film is an effective way to improve the quality of ZnCdSe/ZnSe quantum well. |
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| Keywords: | thin film physics Si substrate ZnCdSe/ZnSe quantum well LP-MOCVD |
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