Emission properties of Ti-DLC films prepared by unbalanced magnetron sputtering |
| |
| Authors: | H.F. Liang Z.H. Liang C.L. Liu |
| |
| Affiliation: | a Key Laboratory for Optical Measurement and Thin Films of the Shannxi Province, Xi’an Technological University, Xi’an 710032, China
b Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, China |
| |
| Abstract: | The field emission properties of Ti-DLC films in diode and coplanar device structures were studied. An emission current density of 1.14 A/cm2 could be obtained at an applied field of 33 V/μm and the threshold field was 24 V/μm for the coplanar emission structure. The silicon substrate was found to limit the emission current in the diode structure because of its high resistivity. |
| |
| Keywords: | 85.45.Db 85.45.Bz |
| 本文献已被 ScienceDirect 等数据库收录！ |
