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A novel sputtering oxidation coupling (SOC) method to fabricate VO2 thin film |
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| Authors: | Xiaofeng Xu Anyuan Yin Jiqing Wang Jiading Liu Xingxing Liu |
| Affiliation: | a Department of Applied Physics, Donghua University, Shanghai 201620, PR China b Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433, PR China c Electronic Engineering Institute, Hei Longjiang University, Harbin 150080, PR China d Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, PR China e College of Textiles, Donghua University, Shanghai 201620, PR China |
| Abstract: | VO2 thin film synthesized by a novel sputtering oxidation coupling (SOC) method has been successfully fabricated. The experimental results show that the optimum oxidation time is 285 s and the thin film exhibits a good metal-insulator transition (MIT) approximately at 340 K. The corresponding structures and surface compositions of the films have been characterized by X-ray diffractometer and X-ray photoelectron spectroscopy separately. |
| Keywords: | VO2 thin films Sputtering oxidation coupling Metal-insulator transition |
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