A study of indium incorporation in In-rich InGaN grown by MOVPE |
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| Authors: | Y Guo XL Liu HP Song AL Yang XQ Xu GL Zheng HY Wei SY Yang QS Zhu ZG Wang |
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| Institution: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Tingshua East Road, No. 35, P.O. Box 912, Beijing 100083, People’s Republic of China |
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| Abstract: | InGaN/GaN heterostructures have been deposited onto (0 0 0 1) sapphire by our home-made low pressure MOVPE with different growth parameters. It has been noted that the indium incorporation depends by a complex way on a number of factors. In this work, the effect of substrate temperature, trimethylindium input flow and V/III ratio on the indium incorporation has been investigated. Finally, by optimizing the growth parameters, we made a series of single-phase InGaN samples with indium content from 10% up to 45%. |
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| Keywords: | MOVPE In-rich InGaN Indium incorporation |
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