Comparison of implantation and diffusion behavior of Ti, Sb and N in ion-implanted single crystal and polycrystalline ZnO: A SIMS study |
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Authors: | J Lee J Metson U Pal |
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Institution: | a Department of Mechanical Engineering, The University of Auckland, 20 Symonds Street, Private Bag 92019, Auckland, New Zealand b Department of Chemistry, The University of Auckland, Private Bag 92019, Auckland, New Zealand c Australian Nuclear Science and Technology Organization, PMB 1, Menai, NSW 2234, Australia d Instituto de Física, Universidad Autónoma de Puebla, Apdo. Postal J-48, Puebla, Pue. 72570, Mexico |
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Abstract: | Implantation and diffusion behavior of Sb, Ti and N in ZnO single crystal and sputter deposited thin films were studied through secondary ion mass spectrometric studies on ion-implanted and thermally annealed samples. Sb was implanted and Ti and N were co-implanted into ZnO single crystals and polycrystalline thin films on Si substrates at room temperature. The implanted samples were then annealed at 800 °C. Depth profiles of implant distributions before and after annealing were examined by Secondary Ion Mass Spectrometry (SIMS). As expected, implant range is sensitive to the mass of the dopants; and the dopant distribution is broadened as implanted elements migrate deeper into the film on thermal annealing. While diffusion of N in the ZnO thin film is not significant, Ti tends to diffuse deeper into the sample during annealing. For Ti and N co-implanted single crystal, annealing induced diffusion causes more redistribution of the lighter N than Ti. In general, implanted dopants diffuse more easily in thin films compared to the single crystal due to the presence of grain boundaries in the latter. |
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Keywords: | Ion-implantation SIMS Dopant diffusion ZnO |
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