Reactive Pulsed Laser Deposition of titanium nitride thin film: Optimization of process parameters using Secondary Ion Mass Spectrometry |
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| Authors: | R Krishnan Tom Mathews S Dash Baldev Raj |
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| Institution: | a Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, Tamil Nadu, India
b Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, India |
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| Abstract: | Reactive Pulsed Laser Deposition is a single step process wherein the ablated elemental metal reacts with a low pressure ambient gas to form a compound. We report here a Secondary Ion Mass Spectrometry based analytical methodology to conduct minimum number of experiments to arrive at optimal process parameters to obtain high quality TiN thin film. Quality of these films was confirmed by electron microscopic analysis. This methodology can be extended for optimization of other process parameters and materials. |
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| Keywords: | TiN SIMS Thin films Reactive Pulsed Laser Deposition Multilayer |
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