Effects of nitrogen doping on the properties of Ge15Sb85 phase-change thin film |
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Authors: | Yin Zhang Bingchu Cai |
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Institution: | National Key Laboratory of Micro/Nano Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of Micro/Nano Science and Technology, Shanghai Jiaotong University, 800 Dongchuan Road, Minhang, Shanghai 200240, China |
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Abstract: | The effects of nitrogen doping on the chemical bonding state, microstructure, electrical property and thermal stability of Ge15Sb85 film were investigated in detail. The doped N atoms tend to bond with Ge to form Ge3N4, as proved by X-ray photoelectron spectroscopy analyses. X-ray diffraction patterns showed that both undoped and N-doped Ge15Sb85 films crystallize into a hexagonal phase very similar to Sb. The thickness reduction upon crystallization for undoped and N-doped Ge15Sb85 films is less than 5%. The crystalline resistivity, crystallization temperature, and thermal stability of amorphous state all increase after nitrogen doping, while the grain size decreases. By adding 7.0 at.% N into the Ge15Sb85 film, the crystalline resistivity increases twelve times and the crystallization temperature increases about 50 °C. The maximum temperature for 10-year retention of amorphous Ge15Sb85 film is estimated to be 147 °C and that of N-doped films is even higher, which will promise better data retention of phase-change random access memory especially in the high-temperature application. |
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Keywords: | Ge15Sb85 Nitrogen doping Chemical bonding state Crystalline resistivity Thermal stability Phase-change random access memory |
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