Structural properties and electrical characteristics of high-k Tm2Ti2O7 gate dielectrics |
| |
Authors: | Tung-Ming Pan Li-Chen Yen |
| |
Institution: | Department of Electronics Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Taoyuan 333, Taiwan, ROC |
| |
Abstract: | In this article, the structural and electrical characteristics of high-k Tm2Ti2O7 gate dielectrics deposited on Si (1 0 0) by means of reactive cosputtering were reported. The Tm2Ti2O7 dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to a rather well-crystallized Tm2Ti2O7 structure and composition and a smooth surface observed by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, respectively. This film also shows almost negligible charge trapping under high constant voltage stress. |
| |
Keywords: | High-k Tm2Ti2O7 Gate dielectrics |
本文献已被 ScienceDirect 等数据库收录! |
|