X-ray diffraction and photoelectron spectroscopy study of swift heavy ion irradiated Mn/p-Si structure

The electronic structure and interfacial chemistry of thin manganese films on p-Si (1 0 0) have been studied by photoelectron spectroscopy measurements using synchrotron radiation of 134 eV and from X-ray diffraction data. The Mn/p-Si structures have been irradiated from swift heavy ions (∼100 MeV) of Fe⁷⁺ with a fluence of 1 × 10¹⁴ ions/cm². Evolution of valence band spectrum with a sharp Fermi edge has been obtained. The observed Mn 3d peak has been related to the bonding of Mn 3d-Si 3sp states. Mn 3p (46.4 eV), Mn 3s (81.4 eV) and Si 2p (99.5 eV) core levels have also been observed which show a binding energy shift towards lower side as compared to their corresponding elemental values. From the photoelectron spectroscopic and X-ray diffraction results, Mn₅Si₃ metallic phase of manganese silicide has been found. The silicide phase has been found to grow on the irradiation.