首页 | 本学科首页   官方微博 | 高级检索  
     


1.3 μm range effectively cylindrical In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (2 2 1)A InP substrates by molecular beam epitaxy
Authors:S. Shimomura   T. Toritsuka   A. Uenishi   T. Kitada  S. Hiyamizu
Affiliation:Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
Abstract:Vertically coupled quantum wires (QWRs) have been made by alternately stacking nominally 3.6 nm thick In0.53Ga0.47As self-organized QWR layers and 1 nm thick In0.52Al0.48As barrier layers on (2 2 1)A-oriented InP substrates by molecular beam epitaxy. The surface of In0.53Ga0.47As QWR layers was corrugated at an amplitude of 1.1 nm and period of 27 nm, and lateral confinement potential is induced by their thickness modulation. The wavelength of photoluminescence (PL) from the stacked QWRs at 15 K becomes longer from 1220 to 1327 nm with increasing total number of stacked QWR layers, NSL, from 1 to 9, while PL full-width at half-maximum is reduced from 22 to 8.6 meV. The PL intensity with the polarization parallel to the wire direction, Ishort parallel, is 1.30 times larger than that with the normal polarization, Iperpendicular, when NSL=1. The PL intensity ratio, Ishort parallel/Iperpendicular, reaches as large as 4 when NSL=9, indicating successful control of relative strength between vertical confinement and lateral confinement of carriers. The value of Ishort parallel/Iperpendicular obtained for the stacked QWRs with NSL=9 is the same value as cylindrical QWRs have. The results indicate that effectively cylindrical QWRs with the best uniformity and 1.3 μm range emission were realized by stacking of self-organized QWR layers.
Keywords:A1. Low dimensional structure   A3. Molecular beam epitaxy   B2. Semiconducting III–  V materials   Quantum wires   (2     1)A InP substrates
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号