| In掺杂对化学共沉淀法合成的SnO_2粉体Zeta电位的影响 |
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| 引用本文： | 胡学兵,周健儿,徐小勇,汪永清,张小珍. In掺杂对化学共沉淀法合成的SnO_2粉体Zeta电位的影响[J]. 人工晶体学报, 2009, 38(6): 1485-1488 |
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| 作者姓名： | 胡学兵 周健儿 徐小勇 汪永清 张小珍 |
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| 作者单位： | 景德镇陶瓷学院江西省高等学校无机膜重点实验室,景德镇,333001;萍乡高等专科学校,萍乡,337055 |
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| 基金项目： | Program of Natural Science Foundation of Jiangxi Province(2007GZC0799);Program of Educational Committee of Jiangxi Province([2005]322;[2006]309) |
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| 摘 要： | 以四氯化锡、三氯化铟和氨水为原料,采用化学共沉淀法制备了In掺杂SnO_2粉体.实验采用XRD和Zeta电位分析仪对In掺杂SnO_2粉体的物化性能进行了研究.结果表明:当In掺杂浓度为2 mol;时,掺杂SnO_2粉体具有较低的Zeta电位.相对于纯SnO_2粉体,In掺杂改变了SnO_2的晶胞参数并增大了其晶胞体积.
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| 关 键 词： | SnO_2粉体 In掺杂 Zeta电位 晶胞体积, |
Effect of In Doping on Zeta Potentials of Tin Oxide Powders Synthesized by Chemical Coprecipitation Method |
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| HU Xue-bing,ZHOU Jian-er,XU Xiao-yong,WANG Yong-qing,ZHANG Xiao-zhen. Effect of In Doping on Zeta Potentials of Tin Oxide Powders Synthesized by Chemical Coprecipitation Method[J]. Journal of Synthetic Crystals, 2009, 38(6): 1485-1488 |
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| Authors: | HU Xue-bing ZHOU Jian-er XU Xiao-yong WANG Yong-qing ZHANG Xiao-zhen |
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| Abstract: | In-doped tin oxide powders were prepared by a chemical coprecipitation process using tin tetrachloride, indium trichloride and ammonia as raw materials. The properties of SnO_2-based powders doped with In were studied systematically by X-ray diffraction (XRD) and Zeta potential analyzer. The results showed Zeta potential of In-doped SnO_2 powders is the lowest when the fraction of In-doped is 2 mol%. Compared with the pure SnO_2, the presence of the dopant alters slightly the crystal cell parameter of SnO_2 and increases significantly its crystal cell volume. |
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| Keywords: | tin oxide powders In-doped Zeta potential crystal cell volume |
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