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Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction |
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| Authors: | ZHANG YuChao XING ZhiGang MA ZiGuang CHEN Yao DING GuoJian XU PeiQiang DONG ChenMing CHEN Hong & LE XiaoYun School of Physics Nuclear Energy Engineering Beihang University Beijing China Renewable Energy Laboratory |
| Affiliation: | ZHANG YuChao1,XING ZhiGang2,MA ZiGuang2,CHEN Yao2,DING GuoJian2,XU PeiQiang2,DONG ChenMing3,CHEN Hong2 & LE XiaoYun1 1 School of Physics , Nuclear Energy Engineering,Beihang University,Beijing 100190,China,2 Renewable Energy Laboratory,Institute of Physics,Chinese Academy of Sciences,3 School of Information , Communication,Tianjin Polytechnic University,Tianjin 300160 |
| Abstract: | |
| Keywords: | GaN patterned sapphire substrate threading dislocation XRD |
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