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Low-energy electron-excited nanoluminescence studies of GaN and related materials |
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| Authors: | L J Brillson S T Bradley S H Goss X Sun M J Murphy W J Schaff L F Eastman D C Look R J Molnar F A Ponce N Ikeo Y Sakai |
| Institution: | a Department of Electrical Engineering, 205 Dreese Laboratory, 2015 Neil Avenue, Ohio State University, Columbus, OH 43210, USA b Department of Physics, 205 Dreese Laboratory, 2015 Neil Avenue, Ohio State University, Columbus, OH 43210, USA c Center for Materials Research, 205 Dreese Laboratory, 2015 Neil Avenue, Ohio State University, Columbus, OH 43210, USA d Department of Electrical Engineering, Cornell University, Ithaca, NY, USA e Semiconductor Research Center, Wright State University, Dayton, OH, USA f Massachusetts Institute of Technology, Lincoln Laboratories, Lexington, MA, USA g Department of Physics, Arizona State University, Phoenix, AZ, USA h Research and Development Department, JEOL Ltd., Tokyo 196-8558, Japan |
| Abstract: | We have used low-energy electron-excited nanoluminescence (LEEN) spectroscopy combined with ultrahigh vacuum surface analysis techniques to obtain electronic bandgap, confined state and deep-level trap information from III nitride compound semiconductor surfaces and their buried interfaces on a nanometer scale. Localized states are evident at GaN/InGaN quantum wells, GaN ultrathin films, AlGaN/GaN pseudomorphic heterostructures, and GaN/Al2O3 interfaces that are sensitive to the chemical composition, bonding and atomic structure near interfaces, and in turn to the specifics of the epitaxial growth process. Identification of electrically active defects in these multilayer nanostructures provides information to optimize interface growth and control local electronic properties. |
| Keywords: | Semiconductor interfaces Heterojunctions Defects GaN AlGaN InGaN Al2O3 Luminescence spectroscopy |
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