Photoionization of small silicon clusters: ionization potentials for Si2 to Si40

Photoionization thresholds of Si _n (n=2–40) were examined by vacuum UV radiation (5.7–8.5 eV) generated by stimulated Raman scattering of narrow-bandwidth 193-nm radiation in high pressure hydrogen and deuterium gases. A strong threshold energy dependence on cluster size is observed, featuring major maxima at 10 and 20. The magic behavior atn=10 is consistent with the results of the photofragmentation and CID experiments reported previously.