Structural characterization of oxide layers thermally grown on 3C-SiC films |
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| Authors: | Q Wahab L Hultman M Willander J -E Sundgren |
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| Institution: | 1. Department of Physics, Link?ping Univerisity, S-581 83, Link?ping, Sweden
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| Abstract: | The oxidation of 3C-SiC films deposited on off-oriented Si(001) substrates by reactive magnetron sputtering has been studied.
The oxidation was carried out using dry conditions at a temperature of 1200°C. The composition of the oxide layer was investigated
by Auger electron spectroscopy (AES). The oxide layer was found to contain no C except for the region very close to the interface,
and the stoichiometry was found to be close to that of SiO2. Cross-sectional transmis-sion electron microscopy (XTEM) showed the oxide layer to be completely amorphous, dense, and homogeneous
with a uniform thickness. High-resolution XTEM imaging showed an atomically sharp SiO2/SiC interface. |
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| Keywords: | Auger electron spectroscopy (AES) oxidation silicon carbide transmission electron microscopy (TEM) wide bandgap semiconductors |
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