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Formation of amorphous sapphire by a femtosecond laser pulse induced micro-explosion |
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| Authors: | Vygantas Mizeikis Nikolay V Surovtsev Akira Saito Saulius Juodkazis |
| Institution: | a Research Institute for Electronic Science, Hokkaido University, N21W10 CRIS Bldg., Sapporo 001-0021, Japan b Research and Utilization Group, Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo-Cho, Sayo-Gun, Hyogo 679-5198, Japan c Japan Science and Technology Agency, CREST, 5, Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan d Institute of automation and electrometry, Novosibirsk 630090, Russia e Laser Research Center, Department of Quantum Electronics, Vilnius University, Sauletekio 9, 2040 Vilnius, Lithuania f Division of Precision Science & Technology and Applied Physics, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, 565-0871 Osaka, Japan |
| Abstract: | We report on structural characterization of void-structures created by a micro-explosion at the locus of a tightly focused femtosecond laser pulse inside the crystalline phase of Al2O3 (R3c space group). The transmission electron microscopy (TEM), micro-X-ray diffraction (XRD) analysis, and Raman scattering revealed a presence of strongly structurally modified amorphous regions around the void-structures. We discuss issues of achieving the required resolution for structural characterization and assignment of newly formed phases of nano-crystallites by TEM, XRD, and Raman scattering from micro-volumes of modified materials enclosed inside the bulk of the host phase. |
| Keywords: | 81 07 &minus b 91 60 Gf 91 60 Hg 61 46 &minus w |
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