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Microstructure and electrical properties of Ba0.5Sr0.5TiO3 thin films prepared on copper foils with La2O3 buffer layers |
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| Authors: | Yanhua Fan Shuhui Yu Ruxu Du |
| Institution: | a Institute of Marine Materials Science and Engineering, Shanghai Maritime University, Shanghai 200135, China b Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518067, China c Institute of Materials Science and Engineering, Ocean University of China, Qingdao 266100, China |
| Abstract: | Ba0.5Sr0.5TiO3 (BST) thin films were deposited on copper foils via sol-gel method with La2O3 as a buffer layer. The films were processed in almost inert atmosphere so that the substrate oxidation was avoided while allowing the perovskite film phase to crystallize. The existence of a La2O3 buffer layer between the BST thin film and Cu foil improved the dielectric constant and reduced the leakage current density of the BST thin film. Meanwhile, the BST thin film exhibited ferroelectric character at room temperature, which was contrast to the para-electric behavior of the film without the buffer layer. Effects of La2O3 buffer layer on the crystallizability and microstructure of BST thin films were also investigated. |
| Keywords: | Thin films Sol-gel growth La2O3 buffer layer Diffusion Electrical properties |
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