Ultra fast melting process in femtosecond laser crystallization of thin a-Si layer |
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Authors: | Yusaku Izawa Masayuki Fujita Takayoshi Norimatsu |
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Affiliation: | a Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871, Japan b Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan c Institute for Laser Technology, 2-6 Yamada-oka, Suita, Osaka 565-0871, Japan |
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Abstract: | In this paper, we investigated the mechanism of crystallization induced by femtosecond laser irradiation for an amorphous Si (a-Si) thin layer on a crystalline Si (c-Si) substrate. The fundamental, SHG, THG wavelength of a Ti:Sapphire laser was used for the crystallization process. To investigate the processed areas we performed Laser Scanning Microscopy (LSM), Transmission Electron Microscopy (TEM) and Imaging Pump-Probe measurements. Except for 267 nm femtosecond laser irradiation, the crystallization occurred well. The threshold fluences for the crystallization using 800 nm and 400 nm femtosecond laser irradiations were 100 mJ/cm2 and 30 mJ/cm2, respectively. TEM observation revealed that the crystallization occurred by epitaxial growth from the boundary surface between the a-Si layer and c-Si substrate. The melting depths estimated by Imaging Pump-Probe measurements became shallower when the shorter wavelength was used. |
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Keywords: | 81.16.&minus c 82.53.Mj 81.07.&minus b 68.55.&minus a 61.50.&minus f 68.37.&minus d |
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