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Surface properties of silicon oxide films deposited using low-pressure dielectric barrier discharge |
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| Authors: | Yejun Yin Dongping Liu Dongming Li Zhiqing Feng Guenther Benstetter |
| Institution: | a School of Science, Dalian Nationalities University, Dalian 116600, China b School of Mechanical Engineering, Dalian Jiaotong University, Dalian 116021, China c Electrical Engineering Department, University of Applied Sciences Deggendorf, Edlmairstr 6&8, Deggendorf 94469, Germany d School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore |
| Abstract: | The deposition of SiOX films from low-pressure dielectric barrier discharge plasmas has been investigated using tetraethoxysilane (TEOS)/O2 as the feed gas. Films were analyzed using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), AFM-based nanoindentation/nanowear techniques, and conductive AFM. Film deposition rates and hydrocarbon incorporation in the SiOX film decrease with addition of O2. High-quality SiOX films with extremely low surface roughness are deposited at high oxidant concertrations. Addition of oxidant to the feed gas leads to a change in the SiOX film structure from precursor-like to a dense SiOX structure. The SiOX films deposited with TEOS/O2 plasmas were found to have soft surface layers, 0.5-1.5 nm thick, which contribute to an improvement of their field emission properties. The effect of gas phase compositions on the surface properties of the conductive surface layer was discussed. |
| Keywords: | Conductive atomic force microscopy SiO2 films XPS |
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