Raman scattering spectra and electrical conductivity of thin silicon films with a mixed amorphous-nanocrystalline phase composition: Determination of the nanocrystalline volume fraction |
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| Authors: | V G Golubev V Yu Davydov A V Medvedev A B Pevtsov N A Feoktistov |
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| Institution: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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| Abstract: | Raman spectra and electrical conductivity of thin films of hydrogenated silicon with mixed amorphous-nanocrystalline phase
composition have been studied. It is shown that interpretation of experimental data in terms of percolation theory permits
one to determine the integrated Raman-scattering cross-section ratio of the nanocrystalline to amorphous phase and to obtain
a quantitative estimate of the volume fraction of each phase.
Fiz. Tverd. Tela (St. Petersburg) 39, 1348–1353 (August 1997) |
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