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CH3CSNH2钝化对铁磁金属与GaAs界面扩散的影响
引用本文:祝传刚,徐彭寿,陆尔东,徐法强,潘海斌. CH3CSNH2钝化对铁磁金属与GaAs界面扩散的影响[J]. 物理学报, 2001, 50(11): 2212-2216
作者姓名:祝传刚  徐彭寿  陆尔东  徐法强  潘海斌
作者单位:(1)海军潜艇学院基础部,青岛266071; (2)中国科学技术大学国家同步辐射实验室,合肥230029
基金项目:国家自然科学基金(批准号:19574042)资助的课题.
摘    要:通过实验对比,研究了CH3CSNH2钝化对铁磁金属与GaAs界面处As扩散行为的影响.发现S钝化处理改变了表面As元素的化学环境,减弱了As元素向铁磁金属外延层中的扩散现象,削弱了As与铁磁金属的反应,形成了较窄的反应层,并且改善了界面磁性.初步探讨了S钝化影响As扩散的原因.关键词:S钝化半导体界面电子结构磁性

关 键 词:S钝化  半导体界面  电子结构  磁性
收稿时间:2001-05-08
修稿时间:2001-05-08

INFLUENCE OF CH3CSNH2 PASSIVATION ON INTERFACE DIFFUSION BETWEEN FERROMAGNETIC METALS AND GaAs
ZHU CHUAN-GANG,XU PENG-SHOU,LU ER-DONG,XU FA-QIANG and PAN HAI-BIN. INFLUENCE OF CH3CSNH2 PASSIVATION ON INTERFACE DIFFUSION BETWEEN FERROMAGNETIC METALS AND GaAs[J]. Acta Physica Sinica, 2001, 50(11): 2212-2216
Authors:ZHU CHUAN-GANG  XU PENG-SHOU  LU ER-DONG  XU FA-QIANG  PAN HAI-BIN
Abstract:The influence of CH3CSNH2 passivation on diffusion at interface between ferromagnetic metals and GaAs has been studied. The experimental results show that sulfur passivation can change the chemical environment of As element , prevent As from diffusing into ferromagnetic metal overlayer, weaken the reaction of As with ferromagnetic metals and enhance the magnetism of the interface. Furthermore, we discussed the reason that S passivation can prevent As atoms diffusion.
Keywords:sulfur passivation   semiconductor interface   electronic structure   magnetism
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