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AFM diagnostics of graphene-based quantum Hall devices
Authors:Sikora Andrzej  Woszczyna Mirosław  Friedemann Miriam  Ahlers Franz Josef  Kalbac Martin
Institution:1. Electrotechnical Institute, Division of Electrotechnology and Materials Science, M. Sk?odowskiej-Curie 55/61, 50-369 Wroc?aw, Poland;2. Physikalisch-Technische Bundesanstalt, Bundesallee 100, D-38116 Braunschweig, Germany;3. J. Heyrovsky Institute of Physical Chemistry, Dolejskova 3, CZ-18223 Prague 8, Czech Republic;1. Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen, Germany;2. Deutsches Elektronen Synchrotron, DESY, Notkestr. 85, D-22607 Hamburg, Germany;1. Department of Physics, Biology and Chemistry, University Linköping, 58183 Linköping, Sweden;2. Department of Physics and Materials Science Center, Philipps University Marburg, Hans Meerwein Str., 35032 Marburg, Germany;3. MAX Lab, Lund University, 221 00 Lund, Sweden;1. Department of Solid State Physics, University of Lodz, Pomorska 149/153, 90236 ?ód?, Poland;2. Instituto de Ciencia de Materiales de Madrid, ICMM-CSIC, Cantoblanco, 28049 Madrid, Spain;1. Physics Department, Institute for Advanced Studies in Basic Sciences (IASBS), P. O. Box 45195-1159, Zanjan, Iran;2. Department of Physics, Sharif University of Technology, 11365-9161 Tehran, Iran
Abstract:In this paper we present the results of morphological, mechanical and electrical investigation of the properties of prepared graphene flakes and graphene-based quantum Hall devices. AFM imaging allowed us to identify the local imperfections and unintentional modifications of the graphene sheets which had caused severe deterioration of the device electrical performance. Utilizing the NanoSwing imaging method, based on the time-resolved tapping mode, we could observe non-homogeneities of the structural and mechanical properties. We also diagnosed the device under working conditions by Kelvin probe microscopy and detected its local electric field distribution.
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