Nonequilibrium conductance of a nanodevice for small bias voltage |
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Authors: | Aligia A A |
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Affiliation: | Centro Atómico Bariloche and Instituto Balseiro, Comisión Nacional de Energía Atómica,8400 Bariloche, Argentina. |
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Abstract: | Using nonequilibrium renormalized perturbation theory, we calculate the retarded and lesser self-energies, the spectral density ρ(ω) near the Fermi energy, and the conductance G through a quantum dot as a function of a small bias voltage V, in the general case of electron-hole asymmetry and intermediate valence. The linear terms in ω and V are given exactly in terms of thermodynamic quantities. When the energies necessary to add the first electron (Ed) and the second one (Ed + U) to the quantum dot are not symmetrically placed around the Fermi level, G has a term linear in V if, in addition, either the voltage drop or the coupling to the leads is not symmetric. The effects of temperature are discussed. The results simplify for a symmetric voltage drop, a situation usual in experiment. |
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