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Phenomenology of picosecond heating and evaporation of silicon surfaces coated with SiO2 layers |
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| Authors: | J. M. Liu L. A. Lompre H. Kurz N. Bloembergen |
| Affiliation: | (1) Gordon McKay Laboratory, Division of Applied Sciences, Harvard University, 02138 Cambridge, MA, USA;(2) Present address: GTE Laboratories Incorporated, 40 Sylvan Road, 02254 Waltham, MA, USA;(3) Present address: C.E.N./Saclay, DPh.G/S.P.A.S., F-91191 Gif-sur-Yvette Cedex, France |
| Abstract: | Picosecond time-resolved reflectivity measurements on bare silicon surfaces and silicon surfaces with oxide layers reveal very fast heat diffusion and material evaporation on subnanosecond time scales. With a thick oxide layer resolidification of a molten silicon surface can take place in a few hundred picoseconds. At high laser fluences, vaporization processes take only a couple of 100 ps. |
| Keywords: | 64.70.Fx 44 79.20.Ds |
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