| Institution: | 1. Department of Electrical Engineering and Electronics, Don State Technical University, 1 Gagarin Square, 344010, Rostov-on-Don, Russian Federation;2. Department of Computational Technique and Automated System Software, Don State Technical University, 1 Gagarin Square, 344010, Rostov-on-Don, Russian Federation;3. Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam;4. Faculty of Electrical & Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam;5. Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, 43 Russkaya Street, 630090, Novosibirsk, Russian Federation;6. Laboratory of Functional Materials, Novosibirsk State University, 2 Pirogova Street, 630090, Novosibirsk, Russian Federation;7. Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, UA, 03142, Kyiv, Ukraine;1. Department of Pathology, Affiliated Hospital of Nantong University, Nantong, Jiangsu, PR China;2. Department of Emergency Medicine, Affiliated Hospital of Nantong University, Nantong, Jiangsu, PR China;3. Department of Chemotherapy, Affiliated Hospital of Nantong University, Nantong, Jiangsu, PR China;4. Department of Radiation Oncology, Nantong Tumor Hospital, Affiliated Tumor Hospital of Nantong University, Nantong, Jiangsu, PR China;1. School of Economics and Management, Southeast University, Nanjing 211189, China;2. Department of Mathematics, Changzhou Institute of Technology, Changzhou 213002, China;1. University of Warwick, Mathematics Institute, Zeeman Building, Coventry CV4 7AL, United Kingdom;2. Charles University, Faculty of Mathematics and Physics, Department of Mathematical Analysis, Sokolovská 83, 186 75 Prague 8, Czech Republic |
