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蓝宝石衬底的化学机械抛光技术的研究
引用本文:王银珍,周圣明,徐军.蓝宝石衬底的化学机械抛光技术的研究[J].人工晶体学报,2004,33(3):441-447.
作者姓名:王银珍  周圣明  徐军
作者单位:中国科学院上海光学精密机械研究所,上海,201800
摘    要:介绍了蓝宝石衬底的化学机械抛光工艺,概述了化学机械抛光原理和设备,讨论分析了影响蓝宝石衬底化学机械抛光的因素,阐述了CMP的主要发展趋势:能定量确定最佳CMP工艺,系统地研究CMP工艺过程参数,建立完善的CMP理论模型,满足不同的工艺要求和应用领域,有效降低成本,提高产量.

关 键 词:蓝宝石  衬底  化学机械抛光  
文章编号:1000-985X(2004)03-0441-07

Research of Chemical Mechanical Polishing Technique of Sapphire Substrate
WANG Yin-zhen,ZHOU Sheng-ming,XU Jun.Research of Chemical Mechanical Polishing Technique of Sapphire Substrate[J].Journal of Synthetic Crystals,2004,33(3):441-447.
Authors:WANG Yin-zhen  ZHOU Sheng-ming  XU Jun
Abstract:Chemical mechanical polishing (CMP) technique of sapphire substrate was introduced in this paper. CMP theory and equipment were summarized.The factors that influence polishing rate and quality were emphatically discussed. The trends of CMP are as follows: CMP technology could be quantified, process parameters could be systematically studied, perfect CMP theory model could be established to meet different technological demands and applying fields, to reduce cost and enhance output.
Keywords:sapphire  substrate  chemical mechanical polishing (CMP)
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