Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films |
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Authors: | Long Xue Li Xaing Lin Peng-Ting Cheng Xing-Wang Liu Ying Cao Chuan-Bao |
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Affiliation: | School for Materials Science & Engineering, Beijing Institute of Technology Beijing, Beijing 100081, China |
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Abstract: | Sol--gol method was employed to synthesize Mg doped ZnOfilms on Si substrates. The annealing temperature-dependentstructure and optical property of the produced samples were studied.An interesting result observed is that increasing Mg concentrationin the studied samples induces the full width at half maximum (FWHM)of their near-band-edge (NBE) emission decrease and the defectrelated emission of the corresponding sample suppresses drastically.The possible mechanism of the observed result is discussed. |
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Keywords: | doping ZnO photoluminescence |
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