Cd掺杂扩散诱发InSb晶体缺陷的X光研究

文章采用了双晶衍射和同步辐射X射线貌相实验手段,对扩散掺杂Cd前后InSb单晶中位错密度的变化进行了对比分析。研究证实了扩散会导致InSb位错密度增加,导致双晶衍射的半高宽增加。较低的半高宽数值对应的X射线貌相中未观察到位错线,只有具有较高的半高宽数值的InSb单晶的X射线貌相上才显示了位错线。本文认为酸蚀可以有效去除InSb浅表面的高缺陷层。

X-ray Study on the Defects Induced by Cd-doped InSb

Diffusion-induced defects occurred when Cd was doped into InSb to form N-type semiconductor. The change of the dislocation density in InSb wafer, before or after doped, was observed and compared by using the double-crystal diffraction technique and the X-ray topology of synchrony radio accelerator. The result showed that the doping not only increased the dislocation density, but also increased FWHM ( FullWidth atHalfMaximum). The X-ray topography of InSb with a low FWHM showed no dislocations, and that of InSb with a high FWHM showed an array of dislocation. This paper conclude etching p rocessing can effectively remove the surface layerwith a high density of defects.