Trapping centers and their distribution in Tl2In2Se3S layered single crystals |
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| Authors: | I Guler NM Gasanly |
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| Institution: | 1. Inter University Accelerator Centre, New Delhi 110067, India;2. School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067, India;1. Gazi University, Technical Education Faculty, Electronic-Computer Department, 06500 Teknikokullar, Ankara, Turkey;2. Middle East Technical University, Engineering Faculty, Electric-Electronic Engineering Department, Ankara, Turkey;1. Department of Physics, Gebze Institute of Technology, Gebze, 41400, Kocaeli, Turkey;2. Kazan Physical–Technical Institute, 10/7, Sibirsky Trakt, 420029, Kazan, Russia;3. Institute of Physics, Azerbaijan Academy of Sciences, H. Javid Av. 33, Baku, Azerbaijan |
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| Abstract: | Thermally stimulated current (TSC) measurements have been carried out on Tl2In2Se3S layered single crystals in the temperature range of 10–175 K. The TSC spectra reveal the presence of two peaks (A and B). The electronic traps’ distributions have been analyzed by different light illumination temperature techniques. It was revealed that the obtained traps’ distribution can be described as an exponential one. The variations of one order of magnitude in the traps’ density for every 30 meV (A peak) and 59 meV (B peak) were estimated. Moreover, the mean activation energy, attempt-to-escape frequency, capture cross section and concentration of the traps were determined. |
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