Cavity enhancement of the magneto-optic Kerr effect in glass/Al/SnO2/PtMnSb/SnO2 structure |
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| Authors: | Mehrdad Moradi Majid Ghanaatshoar |
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| Affiliation: | 1. Liaoning Key Materials Laboratory for Railway, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China;2. Department of Physics, Dalian Jiaotong University, Dalian 116028, China;3. Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150080, China;1. Quantum Information Science, School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, UK;2. York Centre for Quantum Technologies, Department of Physics, University of York, York YO10 5DD, UK;1. College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou 350117, China;2. Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage, Fuzhou 350117, China;3. Fujian Provincial Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen 361005, China |
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| Abstract: | The cavity enhancement effect of the transparent semiconductor SnO2 on the magneto-optical Kerr response of the glass/Al/SnO2/PtMnSb/SnO2 multilayer structure has been investigated using a matrix method. It has been demonstrated that device optimization leads to large Kerr rotation and figure of merit (FOM) with a vanishing ellipticity in the visible portion of the electromagnetic spectrum, especially at short wavelengths. This optimization is of interest in view of optical data storage technology. Using numerical simulations, we have also shown that in the optimum condition, the device readout parameters behave smoothly against the design variables. |
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