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Measuring junction temperature of GaAs solar cells using pulse-width modulation photoluminescence
Authors:MD Yang  WC Liao  GW Shu  YK Liu  JL Shen  CH Wu  WC Chou  YC Lee
Institution:1. Department of Physics and Center for Nanotechnology at CYCU, Chung Yuan Christian University, Chung-Li, Taiwan;2. Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan, Taiwan;3. Electrophysics Department, National Chiao-Tung University, Hsin-Chu, Taiwan;4. Department of Electronic Engineering, Tung Nan Institute of Technology, Taipei, Taiwan;1. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan;2. Tokyo City University, Setagaya, Tokyo 158-8557, Japan;1. School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, PR China;2. State Key Laboratory of Robotics and System (HIT), Harbin 150001, PR China;1. Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China;2. Shenzhen Institute of Research and Innovation (SIRI), The University of Hong Kong, Nanshan, Shenzhen, China;3. HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong, Pokfulam Road, Hong Kong, China;4. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
Abstract:A photoluminescence (PL) technique is presented to measure the junction temperature of GaAs solar cells. The technique utilizes the pulse-width modulation of excitation laser and the temperature dependence of PL spectra. The apparent change of PL energy on duty cycle can be advantageously used for the determination of the junction temperature. Varying the duty cycle from 10% to 75% causes an increase of 2.9 K in the junction temperature of GaAs solar cells. The carrier temperature of the junction layer was studied to confirm the result obtained from the pulse-width modulation PL.
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