| Institution: | 1. Department of Physics, National Taiwan University, Taipei 106, Taiwan;2. Department of Electronic and Electrical Engineering and Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea;3. Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;1. Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, India;2. Centre for Research in Nanotechnology & Science, Indian Institute of Technology Bombay, Mumbai 400076, India;3. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076, India;1. Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia;2. Department of Physics, Donbass State Engineering Academy, Shcadinova 72, 84313 Kramatorsk, Ukraine;3. Escuela de Ingeniería de Antioquia-EIA, Medellín, Colombia;4. Centro de Investigación en Ciencias, Instituto de Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, Mexico;1. Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, People''s Republic of China;2. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, Tianjin University, Tianjin 300072, People''s Republic of China;3. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200062, People''s Republic of China;4. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People''s Republic of China;1. Instituto de Física, Universidade Federal de Goiás, 74001-970, Goiânia, GO, Brazil;2. Instituto de Física “Gleb Wataghin”, UNICAMP, 13083-859, Campinas, SP, Brazil;3. Centro Brasileiro de Pesquisas Físicas, Rua Dr. Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ, Brazil;1. National Institute of Standards and Technology, Gaithersburg, MD 20899-8171, USA;2. Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213-3890, USA;3. Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan;1. Department of Digital Technology Design, Tungfang Design Institute, Hunei, Kaohsiung 82941, Taiwan;2. Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan;3. Department of Electrical Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan |
