| Affiliation: | 1. Low Temperature Physics Laboratory, Department of Physics, Indian Institute of Technology, Madras, Tamilnadu 600036, India;2. School of Chemistry, University of Manchester, Oxford Road, Manchester, United Kingdom;3. Department of Physics, Indian Institute of Technology, Mumbai, Maharashtra, India;1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China;2. Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, PR China;1. Department of Physics, National Institute of Technology Rourkela, 769008, India;2. Department of Physics and Materials Science, S.N. Bose National Centre for Basic Sciences, JD-III Salt Lake, Kolkata 700098, India;3. Presidency University, College Street, Kolkata, India;4. Lady Brabourne College, Suhrawardy Avenue, Kolkata, India;1. Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela;2. Grupo de investigación de las Ciencias Básicas Aplicadas, Universidad Politécnica Territorial “Kleber Ramírez”, Ejido 5111, Venezuela;1. Departamento de Física, UEM, Av. Colombo, 5790, 87.020-900 Maringá, PR, Brazil;2. INFIQC-CONICET, Departamento de Físico Química, Facultad de Ciencias Quimicas, Universidad Nacional de Córdoba, Argentina;3. Departamento de Física, Universidade Federal do Ceará, Brazil;4. Institut Néel CNRS/Université de Grenoble, France;1. Physics Department, Korea University, Seoul 136-701, Republic of Korea;2. Physics Department, University of Notre Dame, Notre Dame, IN 46556, USA |
