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Multiferroic behavior and magnetoelectric effect in CoFe2O4/Pb(Zr0.53Ti0.47)O3 thick films |
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| Authors: | W. Chen S. Shannigrahi X.F. Chen Z.H. Wang W. Zhu O.K. Tan |
| Affiliation: | 1. Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore;2. Institute of Materials Research Engineering, Singapore 117602, Singapore;3. School of Mechanical & Aerospace Engineering, Nanyang Technological University, Singapore 639798, Singapore;1. Department of Physics, National Institute of Technology Agartala, Agartala, Tripura, 799046, India;2. Department of Physics, Kazi Nazrul University, Asansol, W. B., 713304, India;3. Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur, 721302, W. B., India |
| Abstract: | A CoFe2O4/Pb(Zr0.53Ti0.47)O3 (CFO/PZT) multiferroic composite thick film assisted by polyvinylpyrrolidone (PVP) was prepared by a hybrid sol–gel processing and spin coating technique. Scanning electronic microscopy indicated a porous microstructure with a thickness of 6.2 μm. Pure PZT perovskite phase observed from x-ray diffraction suggested that the low ratio of CFO particles was deeply buried in the PZT matrix. Ferroelectric and ferromagnetic properties were observed simultaneously at room temperature as well as a lower leakage current compared with a CFO/PZT thin film. The dynamic and static magnetoelectric effects were strongly dependent on the applied DC/AC magnetic field but their values were very low. The results demonstrated the prediction that ferroelectric and ferromagnetic properties can induce a strong magnetoelectric coupling only if a dense microstructure was achieved. |
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