A prerequisite to achieving high performance polymer/inorganic thin film diodes |
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| Authors: | H Liem HS Choy KC Yung |
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| Institution: | 1. Department of Physics, Sona college of Technology, Salem-636005, Tamilnadu, India;2. Department of Physics, Anna University, Guindy campus, Chennai-600025, Tamilnadu, India;1. MOE Laboratory of Biosystems Homeostasis & Protection, College of Life Sciences, Zhejiang University, Hangzhou, Zhejiang 310058, China;2. College of Agricultural and Food Science, Zhejiang A&F University, Lin''an, Zhejiang 311300, China;3. Fujian Key Laboratory of Marine Enzyme Engineering, Fuzhou University, Fuzhou, Fujian 350108, China;1. Key Laboratory for Green Chemical Technology of Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, PR China;2. Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, PR China;1. College of Urban and Rural Construction, Shanxi Agricultural University, Taigu 030801, Shanxi, China;2. Key Laboratory of Agricultural Soil and Water Engineering in Arid and Semiarid Areas of Ministry of Education, Northwest A&F University, Yangling 712100, Shaanxi, China;1. Department of Chemistry, Centre of Advanced Studies, Institute of Science, Banaras Hindu University, Varanasi 221005, India;2. Department of Chemistry and Environmental Science, Madan Mohan Malaviya University of Technology, Gorakhpur 273010, India;1. State Key Laboratory Breeding Base for Zhejiang Sustainable Plant Pest Control, Agricultural Ministry Key Laboratory for Pesticide Residue Detection, Zhejiang Province Key Laboratory for Food Safety, Institute of Quality and Standard for Agro-products, Zhejiang Academy of Agricultural Sciences, Hangzhou 310021, PR China;2. National Shanghai Center for New Drug Safety Evaluation and Research, Shanghai 201203, PR China;3. College of Life Science and Technology, Southwest University for Nationalities, Chengdu, Sichuan 610041, PR China |
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| Abstract: | An alternative approach to high performance polymeric rectifiers based on p-type polymer poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and an n-type zinc oxide (ZnO) films is demonstrated. It is evident that nanoscale grain compatibility at an interface does not ensure that the device has the highest performance, but only a prerequisite for the two materials to exhibit the interaction. Being a non-invasive probe, Raman spectroscopy is used to monitor the degree of interaction between PEDOT:PSS and ZnO films. High performance of devices is achieved by the control of grain matching and more essentially, by the strong interaction of molecules at the interface. The developed PEDOT:PSS/ZnO diode can rectify an incoming a.c. voltage signal at frequencies up to 18 MHz. Operating with a low turn-on voltage, the diode has a current density of 220 mA/cm2 and a rectification ratio of 4000 in the open atmosphere which are higher than previously reported polymer/inorganic vertical diodes. |
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