Electronic transport properties of metallic graphene nanoribbons with two vacancies |
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| Authors: | KL Ma XH Yan Y Xiao YP Chen |
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| Institution: | 1. College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People’s Republic of China;2. Institute of Modern Physics and Department of Physics, Xiangtan University, Xiangtan 411105, People’s Republic of China;1. Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia;2. Academic University–Nanotechnology Research and Education Centre, Khlopina 8/3, 194021 St. Petersburg, Russia;3. Department of Physics, Durham University, Durham DH1 3LE, United Kingdom;1. Material Simulation Laboratory, Department of Physics, Iran University of Science and Technology, Narmak, 16846-13114, Tehran, Iran;2. Computational Physical Science Laboratory, Department of Nano-Science, Institute for Research in Fundamental Sciences (IPM), PO Box 19395-5531, Tehran, Iran;1. Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany;2. Center for Microtechnologies, Chemnitz University of Technology, 09107 Chemnitz, Germany;3. Fraunhofer Institute for Electronic Nano Systems (ENAS), 09126 Chemnitz, Germany;4. Dresden Center for Computational Materials Science (DCMS), TU Dresden, 01062 Dresden, Germany |
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| Abstract: | We studied theoretically the electronic transport of metallic graphene nanoribbons (GNRs) with two vacancies using the tight-binding model and Green’s function method. The results show that the conductance of zigzag GNR (ZGNR) varies with the relative position of two vacancies. However, when two vacancies reside on the edges, the conductance remain unchanged compared to that of perfect GNRs due to the interaction between vacancy state and edge state. Moreover, the conductance at the Fermi level for armchair GNR (AGNR) can be zero or finite depending on the position of vacancies on the GNRs. The demonstrated features of electronic transport open extremely attractive perspectives for designing well-defined GNR-based nanoelectronic devices. |
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