Search for new transparent conductors: Effect of Ge doping on the conductivity of Ga2O3, In2O3 and Ga1.4In0.6O3 |
| |
| Authors: | Angshuman Nag Ajmala Shireen |
| |
| Institution: | 1. Key Laboratory of Photovoltaic Materials of Henan Province, School of Physics & Electronics, Henan University, Kaifeng 475004, PR China;2. Zhengzhou Preschool Education College, Zhengzhou 450000, PR China;1. Department of Chemistry, Faculty of Education, Gunma University, 4-2 Aramaki, Maebashi, Gunma 371-8510, Japan;2. Department of Chemistry, University of Cincinnati, Cincinnati, OH 45221-0172, United States;1. Laboratorio de Películas Delgadas, Instituto de Física, UNAM, Circuito de la Investigación Científica, Ciudad Universitaria, C.P. 04510, México;2. Unidad de Investigación y Desarrollo Tecnológico (UIDT-HGM), Hospital General de México, Doctor Balmis 148, col. Doctores. Del. Cuahutemoc, C.P 06726, México |
| |
| Abstract: | Only a small amount (≤3.5 mol%) of Ge can be doped in Ga2O3, Ga1.4In0.6O3 and In2O3 by means of solid state reactions at 1400 °C. All these samples are optically transparent in the visible range, but Ge-doped Ga2O3 and Ga1.4In0.6O3 are insulating. Only Ge-doped In2O3 exhibits a significant decrease in resistivity, the resistivity decreasing further on thermal quenching and H2 reduction. The resistivity of 2.7% Ge-doped In2O3 after H2 reduction shows a metallic behavior, and a resistivity of ～1 mΩ cm at room temperature, comparable to that of Sn-doped In2O3. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
