Giant magnetoresistance in a two-dimensional electron gas modulated by periodically repeated magnetic barriers |
| |
| Authors: | G Papp S Borza |
| |
| Institution: | 1. Institute of Physics and Electrotechnics, University of West Hungary, Bajcsy Zsilinszky út 4, H-9400 Sopron, Hungary;2. Department of Theoretical Physics, University of Szeged, Aradi vertanúk tere 1, H-6720 Szeged, Hungary;1. Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, PR China;2. Jiangsu Key Laboratory of Vehicle Emissions Control, Center of Modern Analysis, Nanjing University, Nanjing 210093, PR China;1. Faculty of Environmental Science and Engineering, Kunming University of Science and Technology, Kunming 650500, PR China;2. Research Center for Analysis and Measurement, Hainan University, Haikou 570228, PR China;3. Research Center for Analysis and Measurement, Kunming University of Science and Technology, Kunming 650093, PR China;1. School of Chemistry, EaStCHEM, University of Edinburgh, Joseph Black Building, West Mains Road, Edinburgh EH9 3FJ, UK;2. Institute of Bioengineering, School of Engineering, University of Edinburgh, Faraday Building, King’s Buildings, Edinburgh EH9 3Jl, UK;1. Department of Chemical Engineering, National Taiwan University, No. 1, Roosevelt Rd, Sec. 4, Taipei 106, Taiwan;2. Industrial Research Institute Swinburne (IRIS), and Department of Chemistry and Biotechnology, Faculty of Science, Engineering and Technology, Swinburne University of Technology, Hawthorn, 3122 VIC, Australia;3. School of Chemical and Physical Sciences, Flinders University, Bedford Park, 5042 SA, Australia;4. CSIRO Materials Science and Engineering, Bayview Avenue, Clayton, 3168 VIC, Australia;5. ARC Centre of Excellence in Convergent Bio-Nano Science and Technology, Mawson Institute, University of South Australia, Mawson Lakes, 5095 SA, Australia |
| |
| Abstract: | The giant magnetoresistance effect is investigated in a two-dimensional electron gas modulated by periodically repeated magnetic barriers, which can be realized by depositing parallel ferromagnets on the top and the bottom of a heterostructure. It is found that the magnetoresistance ratio (MRR) of the present system shows a strong dependence on the number of ferromagnetic unit cells. The modified MRR (MMRR) shows oscillations, where the number of peaks is determined by the number of units, and our study indicates that for experimentally accessible parameters for a GaAs heterostructure the value of the MMRR can be as high as 55% for a realistic electron density. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
