Raman scattering by two-phonons and fractons in irradiated GaAs |
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| Authors: | Shramana Mishra D Kabiraj Anushree Roy Subhasis Ghosh |
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| Institution: | 1. Department of Physics, Indian Institute of Technology, Kharagpur, 721302, India;2. Inter-university Accelerator Center, Aruna Asaf Ali Marg, New Delhi, 110067, India;3. School of Physical Sciences, Jawaharlal Nehru University, New Delhi, 110067, India;1. The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan;2. National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568, Japan;3. Department of Energy Engineering, Dankook University, 119, Dandae-ro, Dongnam-gu, Cheonan-si, Chungnam 330-714, Republic of Korea;4. Department of Materials Science and Engineering, Korea National University of Transportation, Chungju, Chungbuk 380-702, Republic of Korea;1. School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China;2. School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002, China;3. School of Science, Hebei University of Engineering, Handan 056038, China;1. School of Physics, Madurai Kamaraj University, Madurai 625 021, Tamil Nadu, India;2. Department of Physics and Nanotechnology, SRM University, Chennai 603 203, Tamil Nadu, India;1. School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia;2. Institute of Nano Optoelectronic Research and Technology (INOR), Block A, sains@usm, Persiaran Bukit Jambul, 11900 Penang, Malaysia;3. Department of Photonics, National Cheng Kung University, Tainan 70101, Taiwan;1. Centre for Research in Nanotechnology & Science, Indian Institute of Technology Bombay, Mumbai 400076, India;2. Society for Applied Microwave Electronics Engineering & Research, Indian Institute of Technology Campus, Mumbai 400076, India;3. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India |
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| Abstract: | The second-order transverse acoustic mode and amorphous Raman modes, originating from a continuous random network and medium range ordering (MRO), in high energy light ion (HELI) irradiated GaAs are investigated. The change in the phonon density of states of the transverse acoustic mode phonon distinguishes the effect of HELI irradiation on highly resistive undoped and chromium-doped GaAs. The boson mode, originating from the MRO of the system, has been identified and a model based on phonon-fracton scattering has been used for the explanation of this “boson mode”. The spectral dimension, correlation length and the scaling factor, with which the elastic constant varies with length in MRO regions in GaAs, are estimated. |
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