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Bipolar resistive switching in heterostructures: Bismuth oxide/normal metal
Authors:N.A. Tulina  I.Yu. Borisenko  A.M. Ionov  I.M. Shmyt’ko
Affiliation:1. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow District, Institutskaya 2, 142432, Russia;2. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow District, Institutskaya 6, 142432, Russia;1. School of Environment, Henan Normal University, Xinxiang, Henan 453007, PR China;2. Department of Chemistry, Xinxiang Medical University, Xinxiang, Henan 453003, PR China;3. School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, China;1. Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Circuito Exterior S/N, Ciudad Universitaria, A.P. 70-186, Delegación Coyoacán, C.P. 04510, Cd. Mx. México;2. Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A. P. 70-360, Coyoacán, C.P. 04510, Cd. Mx. México;1. School of Semiconductor and Chemical Engineering & Solar Energy Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea;2. New and Renewable Energy Materials Development Center (NewREC), Chonbuk National University, Jeonbuk, Republic of Korea;1. School of Mechanical and Nuclear Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea;2. School of Mechanical Engineering, Yeungnam University, Gyeongsan 712-749, South Korea;3. Sarojini Naidu Vanitha Mahavidyalaya, Osmania University, Hyderabad 500001, India;4. Inorganic and Physical Chemistry Division, Indian Institute of Chemical Technology, Hyderabad 500607, India
Abstract:Thin filmed heterojunctions Ag/Bi/BiOx/Ag were fabricated and the effect of frequency of applied ac voltage on bipolar resistive switching in the obtained heterojunctions was observed for the first time. It has been found that the frequency dependence of the effect has a universal character for some oxide compounds. This observation confirms the significant role of oxygen-ion migration in the resistive switching phenomena in structures based on oxide compounds.
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