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Modelling of strong coupling regime in bulk GaN microcavities using transfer matrix and quasiparticle formalisms
Authors:F. Réveret  P. Disseix  J. Leymarie  A. Vasson  F. Semond  M. Leroux  J. Massies
Affiliation:1. LASMEA UPB/CNRS UMR 6602, Université Blaise Pascal Clermont-Ferrand II, F-63177 Aubière Cedex, France;2. CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, F-06560 Valbonne, France;1. Department of Photonics, National Cheng Kung University, Tainan, Taiwan;2. Department of Optoelectric Physics, Chinese Culture University, Taipei, Taiwan;3. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan;1. Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, PR China;2. Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024, PR China;3. College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024, PR China;1. Laboratory of Nonlinear Dynamical Systems, POI FEB RAS, 43 Baltiyskaya Str., 690041, Vladivostok, Russia;2. Center for Fundamental and Applied Research, N. L. Dukhov All-Russia Research Institute of Automatics, 127055, Moscow, Russia;3. Institute of Spectroscopy, Russian Academy of Sciences, 142190, Moscow region, Troitsk, Russia;4. Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics, 101000, Moscow, Russia;1. Dipartimento di Informatica, University of Salerno, Italy;2. Institute of Computer Science, University of Wroc?aw, Poland;3. School of Computer and Cyber Sciences, Augusta University, Augusta, USA;4. SWPS University of Social Sciences and Humanities, Warsaw, Poland;1. Physics and Astronomy School, University of Southampton, Southampton SO171BJ, UK;2. Division of Physics and Applied Physics, Nanyang Technological University, 637371 Singapore;3. CNR-SPIN, Viale del Politecnico 1, Rome I-00133, Italy;4. Science Institute, University of Iceland, Dunhagi-3, IS-107, Reykjavik, Iceland;5. Spin Optics Laboratory, State University of Saint-Petersburg, 1, Ulianovskaya, St-Petersburg, Russia;6. ITMO University, St. Petersburg 197101, Russia
Abstract:The evolution of the polaritonic Rabi splitting versus the excitonic broadenings is analyzed within two different formalisms: the transfer-matrix and the quasiparticle models. The splittings are deduced from angle-resolved reflectivity measurements performed at 5 K and 300 K on two GaN microcavities grown on silicon. Although the quasiparticle model allows a qualitative analysis when the quality factor of the cavity is high, the transfer-matrix formalism is more appropriate for the interpretation of the reflectivity spectra, whatever the configuration of the structure.
Keywords:
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