White-light spectral interferometric technique to measure a nonlinear phase function of a thin-film structure |
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| Authors: | P Hlubina J Luňá?ek D Ciprian |
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| Institution: | 1. School of Photoelectric Engineering, Changchun University of Science and Technology, Changchun 130022, China;2. College of Electronic Engineering, Heilongjiang University, Harbin 150080, China;1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 72 (BUPT), 100876 Beijing, China;2. Photonics Research Centre, Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Hung hom, Kowloon, Hong Kong, China;1. Surface Technology R&BD Group, Korea Institute of Industrial Technology (KITECH), Incheon 406-840, Republic of Korea;2. Department of Corporate Diagnosis, Small and Medium Business Corporation, Seoul 150-718, Republic of Korea;3. School of Materials Science and Engineering, Yeungnam University, Gyeongsan 712-749, Republic of Korea;4. Department of Chemical and Environmental Technology, Inha Technical College, Incheon 402-752, Republic of Korea;1. Department of Physics, Mimar Sinan Fine Arts University, Be?ikta?, Istanbul 34349, Turkey;2. Department of Energy Systems Engineering, Faculty of Engineering and Natural Sciences, Kadir Has University, Fatih, Istanbul 34083, Turkey |
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| Abstract: | We present a new two-step white-light spectral interferometric technique to measure a nonlinear phase function of a thin-film structure. The technique is based on recording of channeled spectra at the output of a Michelson interferometer and their processing by using a windowed Fourier transform to retrieve the phase functions. First, the phase function including the effect of a thin-film structure is retrieved. Second, the structure is replaced by a reference sample of known phase change on reflection and the corresponding phase function is retrieved. From the two functions, the nonlinear phase function of the thin-film structure is obtained. The feasibility of this simple method is confirmed in processing the experimental data for a SiO2 thin film on a Si wafer of known optical constants. Four samples of the thin film are used and their thicknesses are determined. The thicknesses obtained are compared with those resulting from reflectometric measurements, and a good agreement is confirmed. |
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