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Epitaxial ZnO thin films grown by pulsed electron beam deposition
Authors:S. Tricot  M. Nistor  E. Millon  C. Boulmer-Leborgne  N.B. Mandache  J. Perrière  W. Seiler
Affiliation:1. GREMI, UMR 6606 CNRS/Université d''Orléans, 14 rue d''Issoudun, B.P. 6744, 45067 Orléans Cedex 2, France;2. National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Bucharest-Magurele, Romania;3. INSP, UMR 7588 CNRS/Université Pierre et Marie Curie - Paris 6, 140 rue de Lourmel, 75015 Paris, France;4. PIMM, UMR 8006 CNRS/ENSAM, 151 Boulevard de l''Hôpital, 75013 Paris, France
Abstract:In this work, the pulsed electron beam deposition method (PED) is evaluated by studying the properties of ZnO thin films grown on c-cut sapphire substrates. The film composition, structure and surface morphology were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction and atomic force microscopy. Optical absorption, resistivity and Hall effect measurements were performed in order to obtain the optical and electronic properties of the ZnO films. By a fine tuning of the deposition conditions, smooth, dense, stoichiometric and textured hexagonal ZnO films were epitaxially grown on (0001) sapphire at 700 °C with a 30° rotation of the ZnO basal plane with respect to the sapphire substrate. The average transmittance of the films reaches 90% in the visible range with an optical band gap of 3.28 eV. Electrical characterization reveals a high density of charge carrier of 3.4 × 1019 cm?3 along with a mobility of 11.53 cm²/Vs. The electrical and optical properties are discussed and compared to ZnO thin films prepared by the similar and most well-known pulsed laser deposition method.
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