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Influence of Ga+ ion irradiation on thermal relaxation of exchange bias field in the IrMn-based magnetic tunnel junctions
Authors:Xian-Jin Qi  Yin-Gang Wang  Jing Yan  Xue-Fei Miao  Zi-Quan Li
Institution:1. Institute of Physics of Materials, Academy of Sciences of the Czech Republic, Brno, Czech Republic;2. Department of Physics, VSB-Technical University of Ostrava, Ostrava, Czech Republic;3. Regional Material Science and Technological Centre, VSB-Technical University of Ostrava, Ostrava, Czech Republic;4. Regional Centre of Advanced Technologies, Palacky University in Olomouc, Olomouc, Czech Republic;1. College of Biological and Environmental Sciences, Zhejiang Wanli University, Ningbo 315100, PR China;2. Korean Bioinformation Center (KOBIC), Korea Research Institute of Bioscience and Biotechnology, Daejeon 305-806, Republic of Korea;3. Department of Bioinformatics, University of Sciences and Technology, Daejeon 305-350, Republic of Korea;4. Department of Dermatology, Sungkyunkwan University School of Medicine, Samsung Medical Center, Seoul 135-710, Republic of Korea;5. Zhejiang Provincial Key Laboratory of Applied Enzymology, Yangtze Delta Region Institute of Tsinghua University, Jiaxing 314006, PR China;1. Institute of Physics, West Pomeranian University of Technology, Al. Piastow 48, 70-311 Szczecin, Poland;2. Solid State Physics, Department of Physics, University of Athens, Panepistimiopolis, 15 784 Zografos, Athens, Greece;3. Institute of Chemical and Environment Engineering, West Pomeranian University of Technology, K. Pulaskiego 10, 70-322 Szczecin, Poland
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